NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

Provided is a nitride semiconductor device and a method for manufacturing same. The method for manufacturing the nitride semiconductor device includes: growing a buffer layer consisting of a first semiconductor on a substrate; growing a first barrier layer consisting of a second semiconductor different from the first semiconductor, thereby forming an oxide layer on a portion in which a recess is formed; growing a second barrier layer consisting of the second semiconductor; removing the oxide layer so as to form the recess; and forming a gate electrode on the recess.