发明名称 |
IMPROVED LATERAL UNIFORMITY IN SILICON RECESS ETCH |
摘要 |
A method of etching recesses (49) into silicon (34) prior to formation of embedded silicon alloy source/drain regions. The recess etch includes a plasma etch component, using an etch chemistry of a primary fluorine-based or chlorine-based etchant (e.g., SF6), in combination with a similar concentration of hydrogen bromide (HBr). The concentration of both the primary etchant and the hydrogen bromide is relatively low; a diluent of an inert gas or oxygen is added to the reactive species. Loading effects on the undercut of the recess etch are greatly reduced, resulting in reduced transistor performance variation. |
申请公布号 |
WO2012037136(A3) |
申请公布日期 |
2012.06.07 |
申请号 |
WO2011US51414 |
申请日期 |
2011.09.13 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED;TEXAS INSTRUMENTS JAPAN LIMITED;FARBER, DAVID, G.;LII, TOM |
发明人 |
FARBER, DAVID, G.;LII, TOM |
分类号 |
H01L21/336;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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