| 摘要 |
A semiconductor memory device includes a switching element coupled between a power supply line and an output terminal of a power supply circuit for supplying a power supply voltage, wherein the switching element is configured to be turned on in response to a standby signal, a page buffer including a plurality of latch circuits, wherein a voltage input terminal of at least one of the latch circuits is coupled to the output terminal of the power supply circuit and a voltage input terminal of at least another one of the latch circuits is coupled to the power supply line, and a control logic circuit configured to generate the standby signal according to an operation mode of the semiconductor memory device. |
