发明名称 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
摘要 Semiconductors devices and methods of making semiconductor devices are provided. According to one embodiment, a semiconductor device, having more than two types of threshold voltages, can be employed in a logic integrated circuit with an embedded SRAM. The semiconductor device can include at least two transistors. The two transistors can be the same conductivity type (e.g., n-type or p-type). In addition, the two transistors can have disparate voltage thresholds.
申请公布号 US2012139057(A1) 申请公布日期 2012.06.07
申请号 US20100961793 申请日期 2010.12.07
申请人 GOTO MASAKAZU;TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. 发明人 GOTO MASAKAZU
分类号 H01L27/088;H01L21/28;H01L29/772 主分类号 H01L27/088
代理机构 代理人
主权项
地址