发明名称 |
Replacement Gate Devices With Barrier Metal For Simultaneous Processing |
摘要 |
A method of simultaneously fabricating n-type and p type field effect transistors can include forming a first replacement gate having a first gate metal layer adjacent a gate dielectric layer in a first opening in a dielectric region overlying a first active semiconductor region. A second replacement gate including a second gate metal layer can be formed adjacent a gate dielectric layer in a second opening in a dielectric region overlying a second active semiconductor region. At least portions of the first and second gate metal layers can be stacked in a direction of their thicknesses and separated from each other by at least a barrier metal layer. The NFET resulting from the method can include the first active semiconductor region, the source/drain regions therein and the first replacement gate, and the PFET resulting from the method can include the second active semiconductor region, source/drain regions therein and the second replacement gate. |
申请公布号 |
US2012139053(A1) |
申请公布日期 |
2012.06.07 |
申请号 |
US20100960586 |
申请日期 |
2010.12.06 |
申请人 |
ANDO TAKASHI;CHUDZIK MICHAEL P.;KRISHNAN SIDDARTH A.;KWON UNOH;NARAYANAN VIJAY;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ANDO TAKASHI;CHUDZIK MICHAEL P.;KRISHNAN SIDDARTH A.;KWON UNOH;NARAYANAN VIJAY |
分类号 |
H01L27/092;H01L21/8238 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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