Solid-state imaging device and method of manufacturing solid-state imaging device

摘要

A solid-state imaging device includes: a gate electrode arranged over an upper surface of a semiconductor substrate; a photoelectric conversion portion formed over the semiconductor substrate to position under the gate electrode; an overflow barrier formed over the semiconductor substrate to position in a portion other than a position facing the gate electrode in a planar direction and adjoin a side face of the photoelectric conversion portion; and a drain formed over the semiconductor substrate to adjoin a side face of the overflow barrier opposite to a side face adjoining the photoelectric conversion portion.