| 摘要 |
1,030,927. Semi - conductor devices. WESTERN ELECTRIC CO. Inc. April 25, 1963 [June 29, 1962], No. 16268/63. Heading H1K. A connection is effected to an exposed portion of the surface of a semi-conductor body having an insulating layer over the remainder of the surface by coating both layer and exposed semi-conductor surface with a layer of a first metal, coating this first metal layer with a second, capable of uniting with the first to form a stable intermetallic material heating to form a resultant metallic layer including the compound which adheres to the semi-conductor but not to the insulating layer and removing the metallic residue from the insulating layer. In one embodiment (Fig. 2), an N-type silicon wafer 10 is subjected to a sequence of operations in which diffusion of boron and phosphorous through a silicon dioxide masking pattern produces an NPN structure. Layers of palladium and aluminium are then sequentially deposited over the oxide to contact the zones through apertures 15, 16. Heating to 750‹ C. causes interdiffusion of the metals, the resulting composite layer adhering to the silicon but not to the masking layer. The residue of the metals is removed from the surface of the mask and a gold electrode provided on the untreated face of the silicon completes the device. Germanium may be employed instead of silicon and gallium, indium, arsenic, and strontium instead of aluminium. Alternatives to palladium for the intermediate metallic layer include nickel, gold, iron, cerium, chromium, lanthanum and uranium. |
