<p>In an ion implanter, an ion current measurement device is disposed behind a mask co-planarly with respect to a surface of a target substrate as if said target substrate was positioned on a platen. The ion current measurement device is translated across the ion beam. The current of the ion beam directed through a plurality of apertures of the mask is measured using the ion current measurement device. In this manner, the position of the mask with respect to the ion beam as well as the condition of the mask may be determined based on the ion current profile measured by the ion current measurement device.</p>
申请公布号
EP2460173(A1)
申请公布日期
2012.06.06
申请号
EP20100740808
申请日期
2010.07.30
申请人
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES
发明人
RIORDON, BENJAMIN, B.;BATEMAN, NICHOLAS, P.T.;WEAVER, WILLIAM, T.;LOW, RUSSELL, J.