发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME |
摘要 |
There are provided a semiconductor device that includes a bypass protection unit against surge voltage or the like, achieves good withstand voltage characteristics and low on-resistance (low On-state voltage), has a simple structure, and is used for large-current purpose and a method for producing the semiconductor device. In the present invention, the semiconductor device includes an n + -type GaN substrate 1 having a GaN layer that is in ohmic contact with a supporting substrate, a FET having an n - -type GaN drift layer 2 in a first region R1, and an SBD having an anode electrode in a second region R2, the anode electrode being in Schottky contact with the n - -type GaN drift layer 2. The FET and the SBD are arranged in parallel. A drain electrode D of the FET and a cathode electrode C of the SBD are formed on the back of the n + -type GaN substrate 1. |
申请公布号 |
EP2461360(A1) |
申请公布日期 |
2012.06.06 |
申请号 |
EP20100804246 |
申请日期 |
2010.07.09 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD.;SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
发明人 |
OKADA, MASAYA;KIYAMA, MAKOTO;YAEGASHI, SEIJI;NAKATA, KEN |
分类号 |
H01L21/8252;H01L21/28;H01L21/338;H01L21/76;H01L21/822;H01L21/8234;H01L27/04;H01L27/06;H01L27/07;H01L27/095;H01L29/06;H01L29/12;H01L29/20;H01L29/47;H01L29/778;H01L29/78;H01L29/80;H01L29/812;H01L29/872 |
主分类号 |
H01L21/8252 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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