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发明名称
Memory element array comprising a switching element with a nanogap and a tunnel element
摘要
申请公布号
EP2006912(A3)
申请公布日期
2012.06.06
申请号
EP20080010468
申请日期
2008.06.09
申请人
FUNAI ELECTRIC CO., LTD.;FUNAI ELECTRIC ADVANCED APPLIED TECHNOLOGY RESEARCH INSTITUTE INC.
发明人
FURUTA, SHIGEO;MASUDA, YUICHIRO;TAKAHASHI, TSUYOSHI;ONO, MASATOSHI
分类号
H01L27/24;H01L45/00
主分类号
H01L27/24
代理机构
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