发明名称 |
Resist underlayer film composition and patterning process using the same |
摘要 |
<p>There is disclosed a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formula (1-1) and/or general formula (1-2), and one or more kinds of compounds and/or equivalent bodies thereof represented by the following general formula (2). There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, (namely, an underlayer film having optimum n-value and k-value), excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.
€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ OHC-X-CHO€ƒ€ƒ€ƒ€ƒ€ƒ(2)</p> |
申请公布号 |
EP2461214(A1) |
申请公布日期 |
2012.06.06 |
申请号 |
EP20110009283 |
申请日期 |
2011.11.23 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
OGIHARA, TSUTOMO;KORI, DAISUKE;BIYAJIMA, YUSUKE;WATANABE, TAKERU;FUJII, TOSHIHIKO;KINSHO, TAKESHI |
分类号 |
G03F7/09;G03F7/095;G03F7/11 |
主分类号 |
G03F7/09 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|