发明名称 |
Nonvolatile semiconductor memory device |
摘要 |
A nonvolatile semiconductor memory device includes: a memory unit; and a control unit. The memory unit includes: a multilayer structure including electrode films and interelectrode insulating films alternately stacked; a semiconductor pillar piercing the multilayer structure; insulating films and a memory layer provided between the electrode films and the semiconductor pillar; and a wiring connected to the semiconductor pillar. In an erase operation, the control unit performs: a first operation setting the wiring at a first potential and the electrode film at a second potential lower than the first potential during a first period; and a second operation setting the wiring at a third potential and the electrode film at a fourth potential lower than the third potential during a second period after the first operation. A length of the second period is shorter than the first period, and/or a difference between the third and fourth potentials is smaller than a difference between the first and second potentials. |
申请公布号 |
US8194467(B2) |
申请公布日期 |
2012.06.05 |
申请号 |
US20100725742 |
申请日期 |
2010.03.17 |
申请人 |
MIKAJIRI YOSHIMASA;KIRISAWA RYOUHEI;KITO MASARU;OOTA SHIGETO;KABUSHIKI KAISHA TOSHIBA |
发明人 |
MIKAJIRI YOSHIMASA;KIRISAWA RYOUHEI;KITO MASARU;OOTA SHIGETO |
分类号 |
G11C16/04;H01L29/792 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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