Magnetoresistive effect element in CPP-type structure including ferromagnetic layer configured with CoFe system alloy and magnetic disk device therewith

摘要

In an MR element of the present invention, an effect of an extremely-high MR ratio is obtained since a crystal structure of a CoFe magnetic layer in the vicinity of an interface with a spacer layer is formed as a close packed structure, such as an hcp structure and an fcc structure, and a total existing ratio of these crystal structures is 25% or more by an area ratio.