发明名称 |
Ultrathin spacer formation for carbon-based FET |
摘要 |
A method for formation of a carbon-based field effect transistor (FET) includes depositing a first dielectric layer on a carbon layer located on a substrate; forming a gate electrode on the first dielectric layer; etching an exposed portion of the first dielectric layer to expose a portion of the carbon layer; depositing a second dielectric layer over the gate electrode to form a spacer, wherein the second dielectric layer is deposited by atomic layer deposition (ALD), and wherein the second dielectric layer does not form on the exposed portion of the carbon layer; forming source and drain contacts on the carbon layer and forming a gate contact on the gate electrode to form the carbon-based FET. |
申请公布号 |
US8193032(B2) |
申请公布日期 |
2012.06.05 |
申请号 |
US20100826221 |
申请日期 |
2010.06.29 |
申请人 |
CHEN ZHIHONG;GUO DECHAO;HAN SHU-JEN;ZHAO KAI;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHEN ZHIHONG;GUO DECHAO;HAN SHU-JEN;ZHAO KAI |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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