发明名称 Perovskite oxide thin film EL element
摘要 There are provided a perovskite oxide thin film EL element in which a hole transport layer/a light-emitting layer/an electron transport layer comprising a perovskite oxide thin film are formed on a lower electrode, and an upper electrode is formed thereon, and a perovskite oxide thin film EL element that provides red light emission in the vicinity of a wavelength of 610 nm, which is the basis of display making. A perovskite oxide thin film EL element comprising a lower electrode 1 comprising a polished single crystal substrate, an electron transport layer 2 comprising a perovskite oxide thin film, which is a dielectric, formed on the lower electrode 1, a light-emitting layer 3 comprising a perovskite oxide thin film formed on the electron transport layer 2, a hole transport layer 4 comprising a perovskite oxide thin film, which is a dielectric, formed on the light-emitting layer 3, a buffer layer 5 formed on the hole transport layer 4, and a transparent upper electrode 6 formed on the buffer layer 5.
申请公布号 US8193704(B2) 申请公布日期 2012.06.05
申请号 US20090735793 申请日期 2009.02.17
申请人 TAKASHIMA HIROSHI;INAGUMA YOSHIYUKI;MIURA NOBORU;UEDA KAZUSHIGE;ITOH MITSURU;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY 发明人 TAKASHIMA HIROSHI;INAGUMA YOSHIYUKI;MIURA NOBORU;UEDA KAZUSHIGE;ITOH MITSURU
分类号 H01J1/62 主分类号 H01J1/62
代理机构 代理人
主权项
地址