发明名称 Process for integrating planar and non-planar CMOS transistors on a bulk substrate and article made thereby
摘要 A process capable of integrating both planar and non-planar transistors onto a bulk semiconductor substrate, wherein the channel of all transistors is definable over a continuous range of widths.
申请公布号 US8193567(B2) 申请公布日期 2012.06.05
申请号 US20080333248 申请日期 2008.12.11
申请人 KAVALIEROS JACK T.;BRASK JUSTIN K.;DOYLE BRIAN S.;SHAH UDAY;DATTA SUMAN;DOCZY MARK L.;METZ MATTHEW V.;CHAU ROBERT S.;INTEL CORPORATION 发明人 KAVALIEROS JACK T.;BRASK JUSTIN K.;DOYLE BRIAN S.;SHAH UDAY;DATTA SUMAN;DOCZY MARK L.;METZ MATTHEW V.;CHAU ROBERT S.
分类号 H01L29/76 主分类号 H01L29/76
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