发明名称 |
Process for integrating planar and non-planar CMOS transistors on a bulk substrate and article made thereby |
摘要 |
A process capable of integrating both planar and non-planar transistors onto a bulk semiconductor substrate, wherein the channel of all transistors is definable over a continuous range of widths. |
申请公布号 |
US8193567(B2) |
申请公布日期 |
2012.06.05 |
申请号 |
US20080333248 |
申请日期 |
2008.12.11 |
申请人 |
KAVALIEROS JACK T.;BRASK JUSTIN K.;DOYLE BRIAN S.;SHAH UDAY;DATTA SUMAN;DOCZY MARK L.;METZ MATTHEW V.;CHAU ROBERT S.;INTEL CORPORATION |
发明人 |
KAVALIEROS JACK T.;BRASK JUSTIN K.;DOYLE BRIAN S.;SHAH UDAY;DATTA SUMAN;DOCZY MARK L.;METZ MATTHEW V.;CHAU ROBERT S. |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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