Apparatus and systems using phase change memories

摘要

Apparatus and systems that use phase-change memory devices are provided. The phase-change memory devices may include multiple phase-change memory cells and a reset pulse generation circuit configured to output multiple sequential reset pulses. Each sequential reset pulse is output to a corresponding one of multiple reset lines. Multiple write driver circuits are coupled to corresponding phase change memory cells and to a corresponding one of the reset lines of the reset pulse generation circuit.