发明名称 Thru silicon enabled die stacking scheme
摘要 A die to die bonding system and method includes an upper die having a front side, a back side, and a fully filled thru silicon via, a portion of the fully filled thru silicon via protruding from the back side of the upper die. A lower die includes a front side, a back side, and a partially filled thru silicon via formed to define a via opening exposed to the front side of the die, a portion of the partially filled thru silicon via protruding from the back side of the lower die. An interconnect bonds an outer surface of the protruding portion of the upper die thru silicon via with an inner surface of via opening in the lower die.
申请公布号 US8193093(B2) 申请公布日期 2012.06.05
申请号 US201113110144 申请日期 2011.05.18
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 CHAUHAN SATYENDRA SINGH
分类号 H01L21/44;H01L21/48 主分类号 H01L21/44
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