发明名称 |
Method of forming a die having an IC region adjacent a MEMS region |
摘要 |
A method that includes forming a first layer having a first dopant concentration, the first layer having an integrated circuit region and a micro-electromechanical region and doping the micro-electromechanical region of the first layer to have a second dopant concentration is presented. The method includes forming a second layer having a third dopant concentration overlying the first layer, doping the second layer that overlies the micro-electromechanical region to have a fourth dopant concentration, forming a micro-electromechanical structure in the micro-electromechanical region using the first and second layers, and forming active components in the integrated circuit region using the second layer. |
申请公布号 |
US8193595(B2) |
申请公布日期 |
2012.06.05 |
申请号 |
US20090651335 |
申请日期 |
2009.12.31 |
申请人 |
MOHANAKRISHNASWAMY VENKATESH;LE NEEL OLIVIER;NGUYEN LOI N.;STMICROELECTRONICS, INC.;STMICROELECTRONICS ASIA PACIFIC PTE LTD. |
发明人 |
MOHANAKRISHNASWAMY VENKATESH;LE NEEL OLIVIER;NGUYEN LOI N. |
分类号 |
H01L27/14 |
主分类号 |
H01L27/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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