发明名称 |
Methods of forming a phase-change material layer including tellurium and methods of manufacturing a phase-change memory device using the same |
摘要 |
The present invention provides methods of forming a phase-change material layer including providing a substrate and a chalcogenide target including germanium (Ge), antimony (Sb) and tellurium (Te) at a temperature wherein tellurium is volatilized and antimony is not volatilized, and performing a sputtering process to form the phase-change material layer including a chalcogenide material on the substrate. Methods of manufacturing a phase-change memory device using the same are also provided. |
申请公布号 |
US8192592(B2) |
申请公布日期 |
2012.06.05 |
申请号 |
US20080051043 |
申请日期 |
2008.03.19 |
申请人 |
KIM DO-HYUNG;KANG SHIN-JAE;PARK IN-SUN;LIM HYUN-SEOK;OH GYU-HWAN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM DO-HYUNG;KANG SHIN-JAE;PARK IN-SUN;LIM HYUN-SEOK;OH GYU-HWAN |
分类号 |
C23C14/04 |
主分类号 |
C23C14/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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