Light emitting device and method of manufacturing thereof

摘要

PURPOSE: A light emitting device and a manufacturing method thereof are provided to maximize luminous efficiency of a light emitting device since the density of a quantum dot participating in a FRET phenomenon increases by arranging the quantum dot to be near the multi-quantum well of an active layer into 3D. CONSTITUTION: A reflective film electrode layer(120) is formed on a metal support layer(110). A nano rod(100) is formed on the reflective film electrode layer. The nano rod includes a p-type semiconductor layer(130), an active layer(140), and an n-type semiconductor layer(150). A reflection preventing film electrode layer(160) is formed on the nanorod. A quantum dot(180) and filler(190) are filled between nanorods.