发明名称 Graphene electronics fabrication
摘要 An electrical circuit structure employing graphene as a charge carrier transport layer. The structure includes a plurality of graphene layers. Electrical contact is made with one of the layer of the plurality of graphene layers, so that charge carriers travel only through that one layer. By constructing the active graphene layer within or on a plurality of graphene layers, the active graphene layer maintains the necessary planarity and crystalline integrity to ensure that the high charge carrier mobility properties of the active graphene layer remain intact.
申请公布号 US8193455(B2) 申请公布日期 2012.06.05
申请号 US20080345760 申请日期 2008.12.30
申请人 MARINERO ERNESTO E.;HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V. 发明人 MARINERO ERNESTO E.
分类号 E21B10/64;E21B10/66 主分类号 E21B10/64
代理机构 代理人
主权项
地址