发明名称 |
Semiconductor laser device and method of manufacturing the same |
摘要 |
A semiconductor laser device includes a substrate and a semiconductor layer formed on a surface of the substrate and having a waveguide extending in a first direction parallel to the surface, wherein the waveguide is formed on a region approaching a first side from a center of the semiconductor laser device in a second direction parallel to the surface and intersecting with the first direction, a first region separated from the waveguide on a side opposite to the first side of the waveguide and extending parallel to the first direction and a first recess portion separated from the waveguide on an extension of a facet of the waveguide, intersecting with the first region and extending in the second direction are formed on an upper surface of the semiconductor laser device, and a thickness of the semiconductor layer on the first region is smaller than a thickness of the semiconductor layer on a region other than the first region. |
申请公布号 |
US8193016(B2) |
申请公布日期 |
2012.06.05 |
申请号 |
US20110985632 |
申请日期 |
2011.01.06 |
申请人 |
HIROYAMA RYOJI;INOUE DAIJIRO;BESSHO YASUYUKI;HATA MASAYUKI;SANYO ELECTRIC CO., LTD. |
发明人 |
HIROYAMA RYOJI;INOUE DAIJIRO;BESSHO YASUYUKI;HATA MASAYUKI |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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