发明名称 |
Near-infrared photodetectors, image sensors employing the same, and methods of manufacturing the same |
摘要 |
Silicon photodetectors using near-infrared dipole antennas. The photodetectors include a silicon region formed on a semiconductor substrate, dipole antenna forming two arms that are spaced apart with the silicon region therebetween and inducing an electromagnetic wave signal of incident light, and electrodes disposed in a vertical direction of the dipole antenna and spaced apart with the silicon region therebetween, where a critical bias voltage is applied to the electrodes to induce an avalanche gain operation in the silicon region.
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申请公布号 |
US8193497(B2) |
申请公布日期 |
2012.06.05 |
申请号 |
US20100656684 |
申请日期 |
2010.02.12 |
申请人 |
PARK YOON-DONG;MILLER DAVID ANDREW BARCLAY;JIN YOUNG-GU;JOE IN-SUNG;SAMSUNG ELECTRONICS CO., LTD.;THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY |
发明人 |
PARK YOON-DONG;MILLER DAVID ANDREW BARCLAY;JIN YOUNG-GU;JOE IN-SUNG |
分类号 |
H01L27/148 |
主分类号 |
H01L27/148 |
代理机构 |
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代理人 |
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地址 |
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