| 摘要 |
A nitride semiconductor laser device includes a multilayer structure including a plurality of nitride semiconductor layers including a light emitting layer, the multilayer structure having cavity facets facing each other, and a plurality of protective films made of a dielectric material provided on one of the cavity facets. The protective films include a first protective film, a second protective film and a third protective film. The first protective film contacts the cavity facet and is made of aluminum nitride. The second protective film is provided on a surface opposite to the cavity facet of the first protective film and is made of a material different from that of the first protective film. The third protective film is provided on a surface opposite to the first protective film of the second protective film and is made of the same material as that of the first protective film. |
