发明名称 |
Magnetoresistive effect device including a nitride underlayer, an antiferromagnetic layer, a first ferromagnetic layer, a nonmagnetic layer and a second ferromagnetic layer which are multilayered in this order on a substrate, magnetic head including the same magnetoresistive effect device, and information storage apparatus including the same magnetic head |
摘要 |
A magnetoresistive effect device includes an underlayer, an antiferromagnetic layer, a first ferromagnetic layer, a nonmagnetic layer, and a second ferromagnetic layer which are multilayered in this order on a substrate. The underlayer is formed of a metal nitride, and the antiferromagnetic layer is formed of an antiferromagnetic material including Ir and Mn. |
申请公布号 |
US8194362(B2) |
申请公布日期 |
2012.06.05 |
申请号 |
US20100842447 |
申请日期 |
2010.07.23 |
申请人 |
IBUSUKI TAKAHIRO;SATO MASASHIGE;UMEHARA SHINJIRO;FUJITSU LIMITED |
发明人 |
IBUSUKI TAKAHIRO;SATO MASASHIGE;UMEHARA SHINJIRO |
分类号 |
G11B5/39 |
主分类号 |
G11B5/39 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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