发明名称 |
High dose implantation strip (HDIS) in H2 base chemistry |
摘要 |
Plasma is generated using elemental hydrogen, a weak oxidizing agent, and a fluorine containing gas. An inert gas is introduced to the plasma downstream of the plasma source and upstream of a showerhead that directs gas mixture into the reaction chamber where the mixture reacts with the high-dose implant resist. The process removes both the crust and bulk resist layers at a high strip rate, and leaves the work piece surface substantially residue free with low silicon loss. |
申请公布号 |
US8193096(B2) |
申请公布日期 |
2012.06.05 |
申请号 |
US20080251305 |
申请日期 |
2008.10.14 |
申请人 |
GOTO HARUHIRO HARRY;CHEUNG DAVID;NOVELLUS SYSTEMS, INC. |
发明人 |
GOTO HARUHIRO HARRY;CHEUNG DAVID |
分类号 |
H01L21/302;H01L21/461 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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