| 发明名称 |
Trench-based power semiconductor devices with increased breakdown voltage characteristics |
| 摘要 |
Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed. |
| 申请公布号 |
US8193581(B2) |
申请公布日期 |
2012.06.05 |
| 申请号 |
US20090420711 |
申请日期 |
2009.04.08 |
| 申请人 |
YEDINAK JOSEPH A.;PROBST DEAN E.;CHALLA ASHOK;CALAFUT DANIEL;FAIRCHILD SEMICONDUCTOR CORPORATION |
发明人 |
YEDINAK JOSEPH A.;PROBST DEAN E.;CHALLA ASHOK;CALAFUT DANIEL |
| 分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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