发明名称 |
Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AlN and their alloys by metal organic chemical vapor deposition |
摘要 |
Methods for the heteroepitaxial growth of smooth, high quality films of N-face GaN film grown by MOCVD are disclosed. Use of a misoriented substrate and possibly nitridizing the substrate allow for the growth of smooth N-face GaN and other Group III nitride films as disclosed herein. The present invention also avoids the typical large (μm sized) hexagonal features which make N-face GaN material unacceptable for device applications. The present invention allows for the growth of smooth, high quality films which makes the development of N-face devices possible. |
申请公布号 |
US8193020(B2) |
申请公布日期 |
2012.06.05 |
申请号 |
US20090466705 |
申请日期 |
2009.05.15 |
申请人 |
KELLER STACIA;MISHRA UMESH K.;FICHTENBAUM NICHOLAS K.;THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
KELLER STACIA;MISHRA UMESH K.;FICHTENBAUM NICHOLAS K. |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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