METHOD OF FABRICATING SEMICONDUCTOR SUBSTARTE AND METHOD OF FABRICATING LIGHE EMITTING DEVICE

摘要

PURPOSE: A method for manufacturing a light-emitting device and a semiconductor substrate is provided to simply eliminate a substrate by forming a cavity between a growth substrate and a semiconductor layer and making the cavity grow up. CONSTITUTION: A first GaN layer(102) is formed on a sapphire substrate(101). A Ta layer(103) is formed on the first GaN layer. A second GaN layer(104) is formed on the first GaN layer and the Ta layer through an MOCVD(Metalorganic Chemical Vapor Deposition) method. A plurality of cavities(102a) is formed within the first GaN layer. A hole(103a) is formed on the Ta layer while forming the second GaN layer. A semiconductor substrate is complete after the second GaN layer is formed.