Bipolar junction transistor integrated with PIP capacitor and method for making the same

摘要

A bipolar junction transistor (BJT) integrated with a PIP capacitor includes a substrate including a bipolar junction transistor region and a PIP capacitor region, a bipolar junction transistor disposed in the bipolar junction transistor region and extending an isolation layer to the PIP capacitor region and a base poly layer disposed on the isolation layer, and a PIP capacitor disposed in the PIP capacitor region and including a lower poly layer, the isolation layer and the base poly layer to selectively form a PIP capacitor.