发明名称 INTERNAL VOLTAGE GENERATING CIRCUIT OF SEMICONDUCTOR APPARATUS
摘要 PURPOSE: An internal voltage generating circuit of a semiconductor device is provided to prevent the operational deterioration of an internal voltage generating circuit by stably generating an internal voltage. CONSTITUTION: A first internal voltage generating unit(210) generates an internal voltage having a constant voltage level by receiving a first reference voltage with the constant level with regard to a first external power voltage if the level of the first external power voltage is high by sensing the level of the first external power voltage. A second internal voltage generating unit(220) is connected to the output terminal of the first internal voltage generating unit. The second internal voltage generating unit generates an internal voltage with the constant voltage level by receiving a control voltage with a higher level than the level of the first external power voltage if the first external power voltage is low.
申请公布号 KR20120057164(A) 申请公布日期 2012.06.05
申请号 KR20100118786 申请日期 2010.11.26
申请人 SK HYNIX INC. 发明人 LEE, JUN GYU
分类号 G11C5/14 主分类号 G11C5/14
代理机构 代理人
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