发明名称 |
Phase change memory device having multiple reset signals and operating method thereof |
摘要 |
A phase change memory device includes a cell array unit having a phase change resistance cell positioned at an intersection of a word line and a bit line. A write driving unit is configured to generate a single write voltage to the cell array unit when data to be written is a first data and is configured to generate a plurality of write voltages selectively when the data is a second data. |
申请公布号 |
US8194440(B2) |
申请公布日期 |
2012.06.05 |
申请号 |
US20080133725 |
申请日期 |
2008.06.05 |
申请人 |
KANG HEE BOK;HONG SUK KYOUNG;HYNIX SEMICONDUCTOR INC. |
发明人 |
KANG HEE BOK;HONG SUK KYOUNG |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|