发明名称 |
Method for fabricating semiconductor device and plasma doping system |
摘要 |
An impurity is introduced into a fin-type semiconductor region (102) formed on a substrate (100) using a plasma doping process, thereby forming an impurity-introduced layer (105). Carbon is introduced into the fin-type semiconductor region (102) using a plasma doping process to overlap at least a part of the impurity-introduced layer (105), thereby forming a carbon-introduced layer. |
申请公布号 |
US8193080(B2) |
申请公布日期 |
2012.06.05 |
申请号 |
US20100922358 |
申请日期 |
2010.03.26 |
申请人 |
SASAKI YUICHIRO;OKASHITA KATSUMI;MIZUNO BUNJI;PANASONIC CORPORATION |
发明人 |
SASAKI YUICHIRO;OKASHITA KATSUMI;MIZUNO BUNJI |
分类号 |
H01L21/42 |
主分类号 |
H01L21/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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