发明名称 |
Nonvolatile semiconductor memory device |
摘要 |
A nonvolatile semiconductor memory device includes a source region and a drain region provided apart from each other in a semiconductor substrate, a first insulating film provided on a channel region between the source region and the drain region, a charge storage layer provided on the first insulating film, a second insulating film provided on the charge storage layer and including a stacked structure of a lanthanum aluminum silicate film and a dielectric film made of silicon oxide or silicon oxynitride, and a control gate electrode provided on the second insulating film. |
申请公布号 |
US8193577(B2) |
申请公布日期 |
2012.06.05 |
申请号 |
US20090506588 |
申请日期 |
2009.07.21 |
申请人 |
TAKASHIMA AKIRA;SHINGU MASAO;YASUDA NAOKI;MURAOKA KOICHI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
TAKASHIMA AKIRA;SHINGU MASAO;YASUDA NAOKI;MURAOKA KOICHI |
分类号 |
H01L29/792;H01L21/336;H01L21/8238 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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