发明名称 Two-terminal switching devices and their methods of fabrication
摘要 Two-terminal switching devices characterized by high on/off current ratios and by high breakdown voltage are provided. These devices can be employed as switches in the driving circuits of active matrix displays, e.g., in electrophoretic, rotating element and liquid crystal displays. The switching devices include two electrodes, and a layer of a broad band semiconducting material residing between the electrodes. According to one example, the cathode comprises a metal having a low work function, the anode comprises an organic material having a p+ or p++ type of conductivity, and the broad band semiconductor comprises a metal oxide. The work function difference between the cathode and the anode material is preferably at least about 0.6 eV. The on/off current ratios of at least 10,000 over a voltage range of about 15 V can be achieved. The devices can be formed, if desired, on flexible polymeric substrates having low melting points.
申请公布号 US8193594(B2) 申请公布日期 2012.06.05
申请号 US201113015013 申请日期 2011.01.27
申请人 YU GANG;SHIEH CHAN-LONG;LEE HSING-CHUNG;CBRITE INC. 发明人 YU GANG;SHIEH CHAN-LONG;LEE HSING-CHUNG
分类号 H01L21/00;H01L29/04;H01L47/00 主分类号 H01L21/00
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