发明名称 Electronic device including trenches and discontinuous storage elements
摘要 An electronic device can include a substrate including a first trench having a first bottom and a first wall. The electrode device can also include a first gate electrode within the first trench and adjacent to the first wall and overlying the first bottom of the first trench, and a second gate electrode within the first trench and adjacent to the first gate electrode and overlying the first bottom of the first trench. The electronic device can further include discontinuous storage elements including a first set of discontinuous storage elements, wherein the first set of the discontinuous storage elements lies between (i) the first gate electrode or the second gate electrode and (ii) the first bottom of the first trench. Processes of forming and using the electronic device are also described.
申请公布号 US8193572(B2) 申请公布日期 2012.06.05
申请号 US20090647250 申请日期 2009.12.24
申请人 LI CHI-NAN;HONG CHEONG MIN;FREESCALE SEMICONDUCTOR, INC. 发明人 LI CHI-NAN;HONG CHEONG MIN
分类号 H01L29/76 主分类号 H01L29/76
代理机构 代理人
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