| 摘要 |
<p>PURPOSE: A semiconductor device with a barrier metal layer is provided to control a short circuit generated between a gate and a source by preventing aluminum sparks from being generated in a polysilicon gate electrode. CONSTITUTION: A main transistor cell includes a gate electrode(6) and an source electrode of polysilicon. An interlayer insulating film(7) is formed on the gate electrode. A source electrode(101) includes aluminum which is not only connected to the source electrode but also extended onto the interlayer insulating film. A gate pad(102) includes aluminum connected to the gate electrode. A barrier metal layer(9) is interposed not only between the source electrode and the interlayer insulating film but also between the gate pad and the gate electrode.</p> |
