Method for fabricating semiconductor device

摘要

PURPOSE: A semiconductor device manufacturing method is provided to reduce the number of photo mask processes by forming a pattern of an asymmetrical structure through a DPT(Double Patterning Technology) process using a crossed line pattern. CONSTITUTION: A plurality of first conductive line layers(130) is formed on a semiconductor substrate(100). A first mask layer(160) which includes a line pattern in a second direction is formed on the first conductive line layer. The first mask layer is comprised of an amorphous carbon layer(162) and a first silicon oxide nitride layer(164). A second mask layer(170) which includes an open region for a first contact is formed on the first mask layer. A trench includes a contact region corresponding to the open region and a line region corresponding to the line pattern.