| 摘要 |
<p>PURPOSE: A thin film transistor and a method for manufacturing an electrode substrate used in a display device are provided to reduce parasitic capacitance by integrating a pixel electrode and a source electrode. CONSTITUTION: A gate electrode(12) is formed on a substrate(11). A gate insulating layer(13) is formed on the gate electrode. A source electrode(14) and a drain electrode(15) are formed on the gate insulating layer. A transparent amorphous oxide semiconductor layer is formed on the gate electrode, the source electrode, and the drain electrode. An island shaped insulating layer(18) is formed on the transparent amorphous oxide semiconductor layer.</p> |
