FLASH MEMORY OF USING FRINGING FIELD EFFECT AND ELECTROSTATIC SHIELDING

摘要

PURPOSE: A flash memory which utilizes fringing and electrostatic shielding effects is provided to minimize interference due to an adjacent gate stack by generating an electrostatic shielding phenomenon using a gate electrode which is made of a conductive material. CONSTITUTION: A tunneling insulating film(110) is formed on a substrate(100). A first gate stack(150) is formed on the tunneling insulating film. The first gate stack is comprised of a first charge trapping layer(121), a first blocking insulation film(131), and a first gate electrode(141). A second gate stack(160) is formed on the tunneling insulating film. The second gate stack is comprised of a second charge trapping layer(123), a second blocking insulation film(133), and a second gate electrode(143).