| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve insulating properties of an inter-electrode insulating film installed between a floating gate electrode film and a control gate electrode film. CONSTITUTION: A plurality of device separation grooves(3) is formed on the surface of a silicon substrate(2). A device separation insulating film(4) is formed within the device separation groove. A gate insulating film(5) is formed on a plurality of active regions(Sa) of the silicon substrate partitioned by a device separation region(Sb). A floating gate electrode film(6) is formed on the gate insulating film. An inter-electrode insulating film(7) is formed on the upper front and side surfaces of the floating gate electrode film. The inter-electrode insulating film is comprised of a first silicon oxide film(8), a first silicon nitride film(9), and a second silicon oxide film(10). |
