发明名称 Single Crystal Ingot Grower
摘要 PURPOSE: A single crystal ingot growing apparatus is provided to significantly reduce process time by effectively cooling residual materials created during a single crystal growth process. CONSTITUTION: An exhaust line(170) comprises a fluid inlet hole. A water tank(184) is located on the exhaust line. An air injection hole(182) is located on one side of the water tank. An air injection nozzle(186) connected to the exhaust line is located on the other side of the water tank. The air flow rate inside the exhaust line is 1.5 to 15 m/s.
申请公布号 KR20120056035(A) 申请公布日期 2012.06.01
申请号 KR20100117540 申请日期 2010.11.24
申请人 LG SILTRON INCORPORATED 发明人 HWANG, JUNG HA;KIM, SANG HEE;LEE, SANG HOON;SIM, BOK CHEOL
分类号 C30B15/00;C30B29/06 主分类号 C30B15/00
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