| 摘要 |
PURPOSE: A susceptor and a chemical vapor deposition apparatus including the same are provided to perform a deposition process by loading substrates of various sizes on a stepped region and a loading groove, thereby improving production efficiency. CONSTITUTION: A chamber comprises a first chamber(100) located on the upper part of the chamber and a second chamber(200) combined with the first chamber. A process gas supply device(300) supplies process gas(G1) and inert gas(G2) to a substrate. The second chamber comprises a susceptor(500) for loading the substrate. The second chamber comprises a gas exhaust hole(201) for discharging the process gas and the inert gas. A guide member(610) is installed between the susceptor and an inner wall of a reaction chamber(800). The guide member comprises an outer circumferential wall(611), a curved part(612), an inner circumferential wall(613), and a discharge hole(615).
|
