| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to relieve stress applied on a metal wiring pattern by deforming the shape of the metal wiring pattern, thereby preventing lifting of a surface between a through-silicon via and the metal wiring pattern. CONSTITUTION: A first metal wiring pattern(120) connected to a first contact plug(105) is formed on the upper part of a semiconductor substrate(100). The first metal wiring pattern is formed on the upper part of the first contact plug with a fixed interval(W). A second interlayer insulating film(123) is formed on the upper part of the first metal wiring pattern. A plurality of second contact holes is formed for exposing the first metal wiring pattern by etching the second interlayer insulating film. A second contact plug(125) is formed by burying a conductive material in the second contact hole.
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