| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce forward voltage drop of a Schottky barrier diode by providing a second barrier metal 7 separately so as to cause conductivity modulation by using a barrier metal of low barrier height, thereby reducing drift resistance. <P>SOLUTION: The Schottky barrier diode 1 is configured so that a first barrier metal 6 joining to an N<SP POS="POST">-</SP>epitaxial layer 3 uses a barrier metal of low barrier height, and a second barrier metal 7 of high barrier height is provided on the upper surface across the N<SP POS="POST">-</SP>epitaxial layer 3 and a P<SP POS="POST">+</SP>guard ring 4. Consequently, the micro-current region has a curve of low VF characteristics, and minority carriers are injected positively from the P<SP POS="POST">+</SP>guard ring 4 to the high current region so as to have low VF characteristics thus reducing forward voltage drop. <P>COPYRIGHT: (C)2012,JPO&INPIT |
