发明名称 THERMOELECTRIC MATERIAL COMPRISING Mg2Si GROUP COMPOUND AND MANUFACTURING METHOD THEREOF
摘要 <P>PROBLEM TO BE SOLVED: To provide a thermoelectric material with a large dimensionless performance index and thus facilitate the manufacturing method. <P>SOLUTION: A thermoelectric material comprises a Mg<SB POS="POST">2</SB>Si group compound of the chemical formula Mg<SB POS="POST">2-x-y-z</SB>Al<SB POS="POST">x</SB>Zn<SB POS="POST">y</SB>Mn<SB POS="POST">z</SB>Si in which x&ne;0, y&ne;0, z&ne;0, 0.04&le;y/x&le;0.6 and 0.013&le;z/x&le;0.075, where the total added amount of Al, Zn and Mn is 0.3at% or more and 5at% or less. Mg<SB POS="POST">2-x-y-z</SB>Al<SB POS="POST">x</SB>Zn<SB POS="POST">y</SB>Mn<SB POS="POST">z</SB>is imparted as an Mg alloy. The Mg alloy and Si powder are mixed so that the atomic ratio of the Mg alloy and the Si is 2:1; the Mg alloy and the Si are subjected to synthesis reaction using a liquid phase-solid phase reaction method, in an inert gas atmosphere at a temperature of a melting-point or higher of the Mg alloy, in solid-liquid coexistence state of the Mg alloy in liquid-phase state and the Si in solid-phase state; by cooling after completion of the reaction, a porous Mg<SB POS="POST">2</SB>Si group compound is produced; the Mg<SB POS="POST">2</SB>Si group compound is pulverized in an inert gas atmosphere to form a pulverized body; and then the pulverized body is subjected to pressure sintering under vacuum or an inert atmosphere. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012104558(A) 申请公布日期 2012.05.31
申请号 JP20100249891 申请日期 2010.11.08
申请人 HITACHI CHEM CO LTD;NAGOYA UNIV 发明人 ITO TAKASHI;HAGIO KENTO
分类号 H01L35/14;B22F3/14;B22F9/02;B22F9/04;C22C1/05;C22C23/00;C22C23/02;C22C29/18;H01L35/34 主分类号 H01L35/14
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