| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a silicon nitride layer being excellent in step coverage and having a uniform film thickness in a high-aspect-ratio hole. <P>SOLUTION: After formation of a hole, one first cycle and one or more second cycles are performed. In the first cycle, a bilayer of a first silicon layer is formed on an upper inner wall of the hole, and a monolayer of the first silicon layer is formed on a lower inner wall of the hole, and then, a surface of the upper silicon layer of the hole is made to be a monolayer of a first silicon oxide layer. Further, a monolayer of a second silicon layer is formed on the first silicon layer on the lower inner wall of the hole, and then, a first silicon nitride layer is formed on the whole inner wall surface of the hole by a nitriding process. In the second cycle, a monolayer of a second silicon oxide layer is formed on the upper first silicon nitride layer of the hole, and then, a monolayer of a fourth silicon layer is formed on the lower first silicon nitride layer of the hole. Then, a second silicon nitride layer is formed on the whole inner wall surface of the hole by a nitriding process. <P>COPYRIGHT: (C)2012,JPO&INPIT |
