发明名称 SEMICONDUCTOR DEVICE COMPRISING A CAPACITOR AND AN ELECTRICAL CONNECTION VIA AND FABRICATION METHOD
摘要 A dielectric wafer has, on top of its front face, a front electrical connection including an electrical connection portion. A blind hole passes through from a rear face of the wafer to at least partially reveal a rear face of the electrical connection portion. A through capacitor is formed in the blind hole. The capacitor includes a first conductive layer covering the lateral wall and the electrical connection portion (forming an outer electrode), a dielectric intermediate layer covering the first conductive layer (forming a dielectric membrane), and a second conductive layer covering the dielectric intermediate layer (forming an inner electrode). A rear electrical connection is made to the inner electrode.
申请公布号 US2012133020(A1) 申请公布日期 2012.05.31
申请号 US201113298735 申请日期 2011.11.17
申请人 JOBLOT SYLVAIN;FARCY ALEXIS;CARPENTIER JEAN-FRANCOIS;BAR PIERRE;STMICROELECTRONICS S.A. 发明人 JOBLOT SYLVAIN;FARCY ALEXIS;CARPENTIER JEAN-FRANCOIS;BAR PIERRE
分类号 H01L29/92;H01L21/02 主分类号 H01L29/92
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