发明名称 MONOLITHIC THREE TERMINAL PHOTODETECTOR
摘要 Photodetectors operable to achieve multiplication of photogenerated carriers at ultralow voltages. Embodiments include a first p-i-n semiconductor junction combined with a second p-in semiconductor junction to form a monolithic photodetector having at least three terminals. The two p-i-n structures may share either the p-type region or the n-type region as 5 a first terminal. Regions of the two p-i-n structures doped complementary to that of the shared terminal form second and third terminals so that the first and second p-i-n structures are operable in parallel. A multiplication region of the first p-i-n structure is to multiply charge carriers photogenerated within an absorption region of the second p-i-n structure with voltage drops between the shared 10 first terminal and each of the second and third terminals being noncumulative.
申请公布号 WO2012071219(A1) 申请公布日期 2012.05.31
申请号 WO2011US60807 申请日期 2011.11.15
申请人 INTEL CORPORATION;NA, YUN-CHUNG N.;KANG, YIMIN;CHAO, IWEN 发明人 NA, YUN-CHUNG N.;KANG, YIMIN;CHAO, IWEN
分类号 H01L31/10;H01L31/105;H01L31/107 主分类号 H01L31/10
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